page 1 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com the big deal ? ultra low noise fgure, 0.5 db ? high gain, high ip3, 33 dbm ? high p1db, 20.4 dbm product overview mini-circuits PMA2-43LN-D+ is an e-phemt based, ultra-low noise mmic amplifer die with a unique combination of low noise and high ip3, making this amplifer ideal for sensitive, high-dynamic-range receiver applications. this design operates on a single 5v supply, is well matched for 50 ? systems. feature advantages ultra-low noise, 0.5 db at 1.9 ghz enables lower system noise fgure performance high ip3 ? +32.9 dbm at 1.9 ghz ? +33.2 dbm at 2.5 ghz combination of low noise and high ip3 makes this mmic amplifer ideal for use in low noise receiver front end (rfe) as it gives the user advantages of sensitivity & two-tone im performance at both ends of the dynamic range. low operating voltage, 5v achieves high ip3 using low voltage. high max input power ? +22 dbm (5 minutes) ? +14 dbm (continuous) ruggedized design provides high power handling for input powers common at receiver inputs, eliminating the need for an external limiter in most cases. high reliability low signal operating current of 51 ma nominal maintains junction temperatures typi - cally below 103 c at 85c temperature at the bottom of the die. key features PMA2-43LN-D+ 50 ? 1.1 to 4.0 ghz ultra low noise, high ip3 monolithic amplifer die
page 2 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com pad function description (see figure 1) rf-in connects to rf input via c1 and bias pad via l1 rf-out & dc-in connects to rf out via c2 and v s via l2 & r2 ground connects to ground bias connects to supply voltage (v s ) via r1 & rb product features ? ultra low noise fgure, 0.5 db at 1.5 ghz ? high ip3, 32.3 dbm typ. at 1.5 ghz ? high pout, p1db 20.4 dbm typ. at 1.9 ghz rev. or m152989 PMA2-43LN-D+ th/rs/cp 151112 general description mini-circuits PMA2-43LN-D+ is an e-phemt based, ultra-low noise mmic amplifer die with a unique combination of low noise and high ip3, making this amplifer ideal for sensitive, high-dynamic-range receiver applications. this design operates on a single 5v supply, is well matched for 50 ? systems. typical applications ? base station infrastructure ? portable wireless ? lte ? gps ? gsm ? airborne radar ordering information: refer to last page PMA2-43LN-D+ 50 ? 1.1 to 4.0 ghz ultra low noise, high ip3 monolithic amplifer die simplifed schematic and pad description +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com parameter ratings operating temperature (ground lead) -40c to 85c junction temperature 150c total power dissipation 0.7 w input power (cw), vd=3v +22 dbm (5minutes max) +14 dbm (continuous) dc voltage +6v 4. permanent damage may occur if any of these limits are exceeded. electrical maximum ratings are not intended for continuous normal operation. 5. die performance measured in industry standard 2x2 mm 8-lead package. absolute maximum ratings 4,5 PMA2-43LN-D+ 1. measured on mini-circuits die characterization test board. see characterization test circuit (fig. 1) 2. current increases at p1db 3. (current at 85c - current at -45c)/130 electrical specifcations 1 at 25c and 5v, unless noted parameter condition (ghz) min. typ. max. units frequency range 1.1 4.0 ghz noise fgure 1.1 0.5 db 1.5 0.5 1.9 0.6 2.5 0.7 4.0 1.3 gain 1.1 22.8 db 1.5 21.1 1.9 19.4 2.5 17.0 4.0 11.9 input return loss 1.1 11.8 db 1.5 16.2 1.9 18.3 2.5 19.8 4.0 13.5 output return loss 1.1 8.7 db 1.5 10.9 1.9 11.5 2.5 10.7 4.0 6.6 output power at 1db compression 1.1 19.4 dbm 1.5 20.4 1.9 20.4 2.5 20.3 4.0 18.9 output ip3 1.1 30.8 dbm 1.5 32.3 1.9 32.9 2.5 33.2 4.0 32.1 device operating voltage (v dd ) 5.0 v device operating current (i dd ) 39 53 64 ma device current variation vs. voltage 0.020 ma/mv thermal resistance, junction-to-ground lead 61 c/w monolithic e-phemt mmic amplifer
page 4 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PMA2-43LN-D+ recommended application and characterization test circuit fig 1. application and characterization circuit note: this block diagram is used for characterization. (dut soldered on mini-circuits characterization test board tb-805+) gain, return loss, output power at 1db compression (p1 db) , output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain and return loss: pin= -25dbm 2. output ip3 (oip3): two tones, spaced 1 mhz apart, 0 dbm/tone at output. component value size c1, c2 1000pf 0402 c5, c6 4.7f 0402 c3, c4 100pf 0402 l1 10nh 0402 l2 8.2nh 0402 r1 49.9 ? 0402 r2 0 ? 0603 rb 5.11k ? 0402 bias die layout critical dimensions parameter values die thickness, m 100 die width, m 800 die length, m 810 bond pad size, m 75 x 75 fig 3. bonding pad positions bonding pad position (dimensions in m, typical) fig 2. die layout monolithic e-phemt mmic amplifer
page 5 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PMA2-43LN-D+ assembly diagram assembly and handling procedure 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic ephempt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. recommended wire length, typical wire wire length (mm) wire loop height (mm) rf-out & dc in, bias 0.60 0.15 ground 0.40 0.15 rf-input 1.00 0.15 rf reference plane - no port extension monolithic e-phemt mmic amplifer rf reference plane material: roger 4350b 10 mil dielectric constant: 3.5 copper thickness: 0.5 oz finishing: enig vdd grd dut rf reference plane
page 6 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com PMA2-43LN-D+ esd rating human body model (hbm): class 1a (250 to <500v) in accordance with ansi/esd stm 5.1 - 2001 machine model (mm): class m1 (pass 25v) in accordance with ansi/esd stm5.2-1999 additional detailed technical information additional information is available on our dash board. to access this information click here performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 10,50,100 kgd* medium ? , partial wafer: kgd*<5k large ? , full wafer PMA2-43LN-Dg+ PMA2-43LN-Dp+ PMA2-43LN-Df+ ? available upon request contact sales representative refer to an-60-067 environmental ratings env-80 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp d. mini-circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an as is basis, with all faults. e. purchasers of this part are solely responsible for proper storing, handling, assembly and processing of known good dice (including, without limitation, proper esd preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and mini-circuits assumes no responsibility therefor or for environmental effects on known good dice. f. mini-circuits and the mini-circuits logo are registered trademarks of scientifc components corporation d/b/a mini- circuits. all other third-party trademarks are the property of their respective owners. a reference to any third-party trademark does not constitute or imply any endorsement, affliation, sponsorship, or recommendation by any such third-party of mini-circuits or its products. additional detailed technical information additional information is available on our dash board. *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. monolithic e-phemt mmic amplifer
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